? 2005 ixys all rights reserved 1 - 2 0528 dsss 30-01ar ixys reserves the right to change limits, test conditions and dimensions. i fav = 2x30 a v rrm = 100 v v f = 0.63 v symbol conditions maximum ratings i frms 70 a i fav t c = 155c; rectangular, d = 0.5 30 a i fav t c = 155c; rectangular, d = 0.5; per device 60 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 600 a e as i as = 15 a; l = 100 h; t vj = 25c; non repetitive 11.3 mj i ar v a =1.5 v rrm typ.; f=10 khz; repetitive 1.5 a (dv/dt) cr 5000 v/s t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 190 w f c mounting force w ith c lip 20...120 n v isol 50/60 hz, rms; t = 1 s 3000 v~ weight typical 6 g v rsm v rrm type v v 100 100 dsss 30-01ar symbol conditions characteristic values typ. max. i r v r = v rrm ;t vj = 25c 2 ma v r = v rrm ;t vj = 125c 20 ma v f i f = 30 a; t vj = 125c 0.63 v i f = 30 a; t vj = 25c 0.79 v i f = 60 a; t vj = 125c 0.78 v r thjc 0.8 k/w r thch 0.25 k/w pulse test: pulse width = 5 ms, duty cycle < 2.0% data according to iec 60747 and per diode unless otherwise specified power schottky rectifier dual diode features international standard package very low v f extremely low switching losses low i rm -values isolated and ul registered e153432 applications rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses dimensions see outlines.pdf c = cathode, a = anode isoplus 247 tm a c a/c isolated back surface * a c/a c
? 2005 ixys all rights reserved 2 - 2 0528 dsss 30-01ar ixys reserves the right to change limits, test conditions and dimensions. 0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 0 20406080 0.001 0.01 0.1 1 10 100 10 30 50 70 0 204060 0 10 20 30 40 50 60 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 0.01 0.1 1 0 50 100 150 0 20 40 60 80 i f(av) t c c i f(av) t s k/w 10 100 1000 10000 100 1000 10000 i fsm t p a 0 20406080 100 1000 10000 c t i r i f a v f v r v r v pf v ma p (av) w z thjc v a s dc 25c 50c 75c 100c 125c t vj = 25c d = 0.5 d = dc 0.5 0.33 0.25 0.17 0.08 single pulse 0.17 0.25 0.33 d = 0.5 t vj =175c 150c a 0.08 dsss 30-01ar t vj = 175c 150c 125c 25c fig. 3 typ. junction capacitance c t vs. reverse voltage v r fig. 2 typ. reverse current i r versus reverse voltage fig. 1 max. forward voltage drop characteristics fig. 4 avg. forward current i f(av) vs. case temperature t c fig. 5 forward power loss characteristics note: all curves are per diode fig. 6 transient thermal impedance junction to case at various duty cycles
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